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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW83 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW83
QUICK REFERENCE DATA R.F. performance MODE OF OPERATION s.s.b. (class-A) s.s.b. (class-AB) PIN CONFIGURATION
halfpage
VCE V 26 28
f MHz 1,6 - 28 1,6 - 28
PL W 0 - 10 (P.E.P.) 3 - 30 (P.E.P.) >
Gp dB 20 typ. 21
dt % -
IC A 1,35 <
d3 dB -40 typ. -30
Th C 70 25
typ. 40 typ. 1,34
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open-collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW83
65 V 36 V 4V 3A 9A 76 W 200 C
-65 to + 150 C
MGP586
MGP587
handbook, halfpage
10
handbook, halfpage
100
IC (A) Th = 70 C 1 Tmb = 25 C
Prf (W)
short-time operation during mismatch continuous r.f. operation derate by 0.42 W/K continuous d.c. operation derate by 0.32 W/K
50
10-1 1 10 VCE (V)
102
0 0 50 100 Th (C) 150
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 28 V; f 1 MHz.
THERMAL RESISTANCE (dissipation = 35 W; Tmb = 80 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 3,15 K/W 2,35 K/W 0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 10 mA Collector-emitter breakdown voltage open base; IC = 50 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 36 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain (1) IC = 1,25 A; VCE = 5 V D.C. current gain ratio of matched IC = 1,25 A; VCE = 5 V Collector-emitter saturation IC = 3,75 A; IB = 0,75 A Transition frequency at f = 100 MHz(1) -IE = 1,25 A; VCB = 28 V -IE = 3,75 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02.
MGP588
BLW83
V(BR)CES V(BR)CEO V(BR)EBO ICES ESBO ESBR hFE devices(1) hFE1/hFE2 voltage(1) VCEsat fT fT Cc Cre Ccf
> > > < > > typ.
65 V 36 V 4V 4 mA 8 mJ 8 mJ 50 10 to 100
< typ. typ. typ. typ. typ. typ.
1,2 1,5 V 530 MHz 530 MHz 50 pF 31 pF 2 pF
handbook, halfpage
3
IC (A) Th = 70 C 2 25 C
1
Fig.4 Typical values; VCE = 28 V. August 1986
0 0 1 VBE (V) 2
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
handbook, halfpage
75
MGP589
MGP590
handbook, halfpage
150
hFE
VCE = 28 V
Cc (pF) 100
50
5V
typ 25 50
0 0 5 IC (A) 10
0 0 20 VCB (V) 40
Fig.5 Typical values; Tj = 25 C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
600
MGP591
fT (MHz)
VCB = 28 V
400 15 V
200
0 0 2 4 6 8 -IE (A) 10
Fig.7 Typical values; f = 100 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
APPLICATION INFORMATION R.F. performance in s.s.b. class-A operation (linear power amplifier) VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W > 10 (P.E.P.) typ. 11 (P.E.P.) typ. 12 (P.E.P.) Note > Gp dB 20 IC A 1,35 1,35 d3 dB(1) -40 -40 d5 dB(1) < -40 < -40 Th C 70 25
BLW83
typ. 24
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
L5 C1 50 C2 L1 R3 T.U.T. C5 R4 L3 C7 C6 R7 C3 L2 R5 C4 R8 R9 BY206 C8 L4
C10 50 C11 C12
+VCC
BD204 R6 R1 R2
C9
MGP592
Fig.8 Test circuit; s.s.b. class-A.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
List of components in Fig.8: C1 C3 C4 C5 C6 C7 C9 = = = = = = = C2 = 10 to 780 pF film dielectric trimmer 22 nF ceramic capacitor (63 V) 47 F/10 V electrolytic capacitor 56 pF ceramic capacitor (500 V) 47 F/35 V electrolytic capacitor C8 = 220 nF polyester capacitor 10 F/35 V electrolytic capacitor C11 = 7 to 100 pF film dielectric trimmer 82 pF ceramic capacitor (500 V) 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads to 2 x 5 mm L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm 600 ; parallel connection of 2 x 1,2 k carbon resistors (5%; 0,5 W each) 15 carbon resistor (5%; 0,25 W) 1,2 ; parallel connection of 4 x 4,7 carbon resistors (5%; 0,125 W each) 33 carbon resistor (5%; 0,25 W) 18 carbon resistor (5%; 0,25 W) 120 wirewound resistor (5%; 5,5 W) 1 carbon resistor (5%; 0,125 W) 47 wirewound potentiometer (3 W) 1,57 ; parallel connection of 3 x 4,7 wirewound resistors ( 5%; 5,5 W each)
BLW83
C10 = C12 = L1 L2 L4 L5 R1 R2 R3 R4 R5 R6 R7 R8 R9 = = = = = = = = = = = = =
handbook, halfpage
-20
MGP593
d3 (dB) IC = 0.8 A 1 A 1.35 A
-40
-60
0
5
10 P.E.P. (W) 15
Fig.9
Intermodulation distortion as a function of output power. Typical values; VCE = 26 V; ---- Th = 70 C; - - - Th = 25 C.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in s.s.b. class-AB operation (linear power amplifier) VCE = 28 V; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W 3 to 30 (P.E.P.) 3 to 25 (P.E.P.) Note Gp dB typ. 21 typ. 21 dt (%) IC (A) d3 dB(1) typ. -30 typ. -30 d5 dB(1) < -30 < -30 IC(ZS) mA 25 25
BLW83
Th C 25 70
at 30 W P.E.P. typ. 40 - typ. 1,34 -
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
L4 C1 50 C2 R2 temperature compensated bias C3 C5 L2 L1 R1 T.U.T. L3 C4
C7 50 C8
+VCC C6
MGP594
Fig.10 Test circuit; s.s.b. class-AB.
List of components: C1 C3 C4 C7 L1 L2 L3 L4 R1 R2 = = = = = = = = = = C2 = 10 to 780 pF film dielectric trimmer C5 = C6 = 220 nF polyester capacitor 56 pF ceramic capacitor (500 V) C8 = 15 to 575 pF film dielectric trimmer 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2 x 5 mm Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2 x 5 mm 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2 x 5 mm 1,2 ; parallel connection of 4 x 4,7 carbon resistors 39 carbon resistor
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW83
handbook, halfpage
-20
MGP595
MGP596
d3, d5 (dB) d3 -30
Th = 90 C 70 C 50 C 25 C
handbook, halfpage
60
30 Gp (dB) Gp 20 dt
dt (%) 40
d5 -40
Th = 90 C 70 C 50 C 25 C
20
10
-50
0
20
P.E.P. (W)
40
0 0 20 P.E.P. (W) 40
0
VCE = 28 V; IC(ZS) = 25 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; typical values
VCE = 28 V; IC(ZS) = 25 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values
Fig.11 Intermodulation distortion as a function of output power.(1)
Fig.12 Double-tone efficiency and power gain as a function of output power.
handbook, halfpage
40
MGP597
handbook, halfpage
20
MGP598
-2.5 xi () -5
Gp (dB) 30
ri () 15
ri
20
10 xi
-7.5
10
5
-10
0 1 10 f (MHz) 102
0 1 10 f (MHz)
102
-12.5
VCE = 28 V; IC(ZS) = 25 mA; PL = 30 W; Th = 25 C; ZL = 9,5
VCE = 28 V; IC(ZS) = 25 mA; PL = 30 W; Th = 25 C; ZL = 9,5
Fig.13 Power gain as a function of frequency.
Fig.14 Input impedance (series components) as a function of frequency.
Figs 13 and 14 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation.
Ruggedness in s.s.b. operation The BLW83 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th = 70 C and PLnom = 35 W (P.E.P.). 9
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW83
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW83
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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